Wire Bond Wires for Interference Shielding

ABSTRACT

Apparatuses relating generally to a microelectronic package having protection from interference are disclosed. In an apparatus thereof, a substrate has an upper surface and a lower surface opposite the upper surface and has a ground plane. A first microelectronic device is coupled to the upper surface of the substrate. Wire bond wires are coupled to the ground plane for conducting the interference thereto and extending away from the upper surface of the substrate. A first portion of the wire bond wires is positioned to provide a shielding region for the first microelectronic device with respect to the interference. A second portion of the wire bond wires is not positioned to provide the shielding region. A second microelectronic device is coupled to the substrate and located outside of the shielding region. A conductive surface is over the first portion of the wire bond wires for covering the shielding region.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of and hereby claims priority to U.S.patent application Ser. No. 15/344,990, filed Nov. 7, 2016, which is acontinuation of U.S. patent application Ser. No. 14/880,967, Filed Oct.12, 2015, now U.S. Pat. No. 9,490,222, the entirety of each of which ishereby incorporated by reference herein for all purposes.

FIELD

The following description relates generally to wire bond wires forvertical interconnection and/or interference shielding.

BACKGROUND

Microelectronic assemblies generally include one or more ICs, such asfor example one or more packaged dies (“chips”) or one or more dies. Oneor more of such ICs may be mounted on a circuit platform, such as awafer such as in wafer-level-packaging (“WLP”), printed board (“PB”), aprinted wiring board (“PWB”), a printed circuit board (“PCB”), a printedwiring assembly (“PWA”), a printed circuit assembly (“PCA”), a packagesubstrate, an interposer, or a chip carrier. Additionally, one IC may bemounted on another IC. An interposer may be a passive or an active IC,where the latter includes one or more active devices, such astransistors for example, and the former does not include any activedevice but may include one or more passive devices, such as capacitors,inductors, and/or resistors. Furthermore, an interposer may be formedlike a PWB, namely without any circuit elements, such as without anypassive or active devices. Additionally, an interposer may include atleast one through-substrate-via.

An IC may include conductive elements, such as pathways, traces, tracks,vias, contacts, pads such as contact pads and bond pads, plugs, nodes,or terminals for example, that may be used for making electricalinterconnections with a circuit platform. These arrangements mayfacilitate electrical connections used to provide functionality of ICs.An IC may be coupled to a circuit platform by bonding, such as bondingtraces or terminals, for example, of such circuit platform to bond padsor exposed ends of pins or posts or the like of an IC; or an IC may becoupled to a circuit platform by soldering. Additionally, aredistribution layer (“RDL”) may be part of an IC to facilitate aflip-chip configuration, die stacking, or more convenient or accessibleposition of bond pads for example.

Some passive or active microelectronic devices may be shielded fromelectric-magnetic interference (“EMI”) and/or radio frequencyinterference (“RFI”). However, conventional shielding may be complicatedto fabricate, too heavy for some mobile applications, and/or too largefor some low-profile applications. Moreover, some shielding may not besuitable for a stacked die or stacked package, generally referred to asthree-dimensional (“3D”) ICs or “3D ICs.”

Accordingly, it would be desirable and useful to provide interferenceshielding that provides an improvement over conventional interferenceshielding.

BRIEF SUMMARY

An apparatus relates generally to a microelectronic package havingprotection from interference. In such an apparatus, a substrate has anupper surface and a lower surface opposite the upper surface and has aground plane. A first microelectronic device is coupled to the uppersurface of the substrate. Wire bond wires are coupled to the groundplane for conducting the interference thereto and extending away fromthe upper surface of the substrate. A first portion of the wire bondwires is positioned to provide a shielding region for the firstmicroelectronic device with respect to the interference. A secondportion of the wire bond wires is not positioned to provide theshielding region. A second microelectronic device is coupled to thesubstrate and located outside of the shielding region. A conductivesurface is over the first portion of the wire bond wires for coveringthe shielding region.

An apparatus relates generally to another microelectronic package havingprotection from interference. In such an apparatus, a substrate has anupper surface and a lower surface opposite the upper surface and has aground plane. A microelectronic device is coupled to the upper surfaceof the substrate. Wire bond wires are bonded to and extend away from theupper surface of the substrate. A first portion of the wire bond wireshave a first height and are positioned proximate to and around the firstmicroelectronic device for providing a shielding region for the firstmicroelectronic device with respect to the interference. The firstportion of the wire bond wires are coupled to the ground plane forconducting the interference thereto. A second portion of the wire bondwires have a second height, which is less than the first height, and arepositioned proximate to and around the first microelectronic device. Thesecond portion of the wire bond wires include signal wires forelectrically coupling the microelectronic device with the substrate. Aconductive surface is over the wire bond wires for covering theshielding region. Upper ends of the first portion of the wire bond wiresare mechanically coupled to the conductive surface.

An apparatus relates generally to yet another microelectronic packagehaving protection from interference. In such an apparatus, a substratehas an upper surface and a lower surface opposite the upper surface andhas a ground plane. A first microelectronic device is coupled to theupper surface of the substrate. Lower ends of wire bond wires arecoupled to the ground plane for conducting the interference thereto. Afirst portion of the wire bond wires is positioned to provide ashielding region for the first microelectronic device with respect tothe interference. A second portion of the wire bond wires is notpositioned to provide the shielding region. A second microelectronicdevice is coupled to the substrate and located outside of the shieldingregion. A conductive surface has the first portion of the wire bondwires coupled thereto. The conductive surface covers the shieldingregion and defines the shielding region with the first portion of thewire bond wires extending away from the conductive surface.

BRIEF DESCRIPTION OF THE DRAWING(S)

Accompanying drawing(s) show exemplary embodiment(s) in accordance withone or more aspects of exemplary apparatus(es) or method(s). However,the accompanying drawings should not be taken to limit the scope of theclaims, but are for explanation and understanding only.

FIG. 1A is a block diagram of a side view depicting an exemplaryconventional system-in-package (“SiP”) without electric-magneticinterference (“EMI”) shielding.

FIG. 1B is a block diagram of a side view depicting another exemplaryconventional SiP without EMI shielding.

FIG. 2 is a corner top-down perspective view depicting an exemplaryportion of a conventional EMI shielding.

FIGS. 3A and 3B are top views of block diagrams depicting respectiveexemplary SiPs with EMI shielding.

FIG. 4 is a block diagram of a cross-sectional side view depicting anexemplary SiP with EMI shielding.

FIG. 5 is a block diagram of a cross-sectional side view depicting anexemplary SiP with a conductive cover and with signal wire bond wires inan EMI shielding region under the conductive cover.

FIG. 6 is a block diagram of a cross-sectional side view depicting anexemplary SiP with EMI shielding using an upper substrate.

FIG. 7 is a block diagram of a top-down view depicting an exemplaryportion of an SiP prior to addition of an upper conductive surface of aFaraday cage.

FIG. 8 is a block diagram of a top-down view depicting an exemplaryportion of another SiP prior to addition of an upper conductive surfaceof a Faraday cage.

FIG. 9A is a block diagram of a cross-sectional side view depicting anexemplary portion of a package-on-package (“PoP”) device with EMIshielding.

FIG. 9B is a block diagram of a cross-sectional side view depicting anexemplary portion of another PoP device with EMI shielding.

FIG. 10 is a block diagram of a cross-sectional side view depicting anexemplary portion of another SiP with EMI shielding.

FIG. 11A is a block diagram of a cross-sectional side view depicting anexemplary portion of an SiP without wire bond wire EMI shielding.

FIG. 11B is a block diagram of a cross-sectional side view depicting anexemplary portion of another SiP without wire bond wire EMI shielding.

FIGS. 12A through 12D are respective block diagrams of cross-sectionalside views depicting exemplary portions of respective SiPs without wirebond wire EMI shielding.

FIGS. 13A through 13D are respective block diagrams of cross-sectionalside views depicting exemplary portions of respective SiPs without wirebond wire EMI shielding and with vertically integrated microelectronicpackages.

DETAILED DESCRIPTION

In the following description, numerous specific details are set forth toprovide a more thorough description of the specific examples describedherein. It should be apparent, however, to one skilled in the art, thatone or more other examples or variations of these examples may bepracticed without all the specific details given below. In otherinstances, well known features have not been described in detail so asnot to obscure the description of the examples herein. For ease ofillustration, the same number labels are used in different diagrams torefer to the same items; however, in alternative examples the items maybe different.

Exemplary apparatus(es) and/or method(s) are described herein. It shouldbe understood that the word “exemplary” is used herein to mean “servingas an example, instance, or illustration.” Any example or featuredescribed herein as “exemplary” is not necessarily to be construed aspreferred or advantageous over other examples or features.

Interference may be electric-magnetic interference (“EMI”) and/or radiofrequency interference (“RFI”). The following description ofinterference shielding may be used for either or both of these types ofinterference. However, for purposes of clarity by way of example and notlimitation, generally only shielding from EMI is described below inadditional detail.

FIG. 1A is a block diagram of a side view depicting an exemplaryconventional system-in-package (“SiP”) 10 without EMI shielding. In SiP10, there may be coupled to a package substrate 19 one or more activemicroelectronic devices 11, passive microelectronic devices 12, and/orIC dies 13. In this example, IC die 13, which may be a passive or activedie, may be subject to EMI. IC die 13 may be wire bonded to packagesubstrate 19 with wire bonds 15 for carrying input/output among othersignals, a power supply voltage and ground reference.

Package substrate 19 may be formed of thin layers called laminates orlaminate substrates. Laminates may be organic or inorganic. Examples ofmaterials for “rigid” package substrates include an epoxy-based laminatesuch as FR4 or FR5, a resin-based laminate such as bismaleimide-triazine(“BT”), a ceramic substrate (e.g. a low temperature co-fired ceramic(LTCC)), a glass substrate, or other form of rigid package substrate.Moreover, a package substrate 19 herein may be a PCB or other circuitboard. Other known details regarding conventional SiP 10 are notdescribed for purposes of clarity.

FIG. 1B is a block diagram of a side view depicting another exemplaryconventional SiP 10 without EMI shielding. SiP 10 of FIG. 1B is the sameas SiP 10 of FIG. 1A, except rather than wire bonds 15, flip-chip (“FC”)interconnects, such as microbumps, 17 are used. Even though microbumpinterconnects 17 are illustratively depicted, other types of die-surfacemount interconnects may be used. Moreover, microbump interconnects 17may be used in addition to wire bonds 15, though not illustrativelydepicted in FIG. 1B.

FIG. 2 is a corner top-down perspective view depicting an exemplaryportion of a conventional EMI shielding 20. In conventional EMIshielding 20, a top electrically conductive plate 23 may be disposedover a bottom conductive plate 24, where such bottom conductive plate 24has a larger surface area than such top conductive plate 23.

Conductive plates 23 and 24 may be respectively coupled to a packagesubstrate 19 with rows of wire bonds 21 and 22. Thus, two sides of topplate 23 may be wire bonded with corresponding rows of wire bonds 21,and likewise two sides of bottom plate 24 may be wire bonded withcorresponding rows of wire bonds 22. Non-electrically conductive spacers(not shown) may be used to insulate wire bonds 21 from bottom conductiveplate 24. A microelectronic device (not shown) to be EMI shielded may besandwiched between top and bottom conductive plates 23 and 24. This typeof EMI shielding with wire bonding may be too bulky for manyapplications. Furthermore, there may be gaps on opposite sides withrespect to wire bonds providing side EMI shielding.

Interference Shielding

FIGS. 3A and 3B are top views of block diagrams depicting respectiveexemplary SiPs 100 with EMI shielding. Each of SiPs 100 may include apackage substrate 19 having coupled to an upper surface 132 thereof oneor more active microelectronic devices 11, one or more passivemicroelectronic devices 12, and wire bond wires 131, where upper ends ofsuch wire bond wires 131 may be coupled to an upper surface 132. Uppersurface 132 may be a conductive surface. Wire bond wires 131 may includewire diameters equal to or less than approximately 0.0508 millimeters (2mils).

A portion of wire bond wires 131 may be positioned to define a shieldingregion 133. Along those lines, rows and columns of a BVA arrangement 136of wire bond wires 131 may be used to encircle or otherwise surround ashielding region 133. Upper ends of at least a subset of such wire bondwires 131 surrounding a shielding region 133 may be used to supportconductive surface 130, and such conductive surface 130 may be over suchshielding region 133 for covering thereof.

Conductive surface 130 may be a rigid or flexible surface which iselectrically conductive. In an implementation, conductive surface 130may be flexible, such as a flexible conductive coating on a surface of aflexible sheet. In another implementation, a rigid plate may provide aconductive surface. A rigid plate may be made of a conductive material.However, a conductive coating may be sprayed or painted on a rigid plateor flexible sheet. In the example of FIG. 3B, conductive surface 130 mayhave holes 137 for allowing upper portions of at least some of wire bondwires 131 defining a shielding region 133 to extend through uppersurface 130, as described below in additional detail.

FIG. 4 is a block diagram of a cross-sectional side view depicting anexemplary SiP 100 with EMI shielding. SiP 100 may include a packagesubstrate 19 having coupled to an upper surface 132 thereof one or moreactive microelectronic devices 11, one or more passive microelectronicdevices 12, and wire bond wires 131, where upper ends of such wire bondwires 131 may be coupled to a conductive surface 130. Even though an SiP100 is described, another type of microelectronic package havingprotection from EMI may be used.

Package substrate 19 has an upper surface 132 and a lower surface 149opposite the upper surface. Package substrate 19 may have locatedbetween surfaces 132 and 149 a ground plane 140 and vias 142interconnected to such ground plane for electrical conductivity.

Wire bond wires 131 may be coupled to ground plane 140 with vias 142.Some wire bond wires 131 may be mechanically coupled to upper surface132 with ball bonds 141 for electrical conductivity; however, in otherimplementations, other types of bonding may be used. Moreover, not allwire bond wires 131 need be coupled to ground plane 140. Some wire bondwires 131 may be used for carrying supply voltages or signals within SiP100. Some wire bond wires 131 may be used for coupling to other deviceswithin SiP 100. However, generally much of the following description isdirected at wire bond wires 131 associated with a Faraday cage 153.Along those lines, wire bond wires 131 may be coupled to one or moreground planes for electrically conducting interference thereto.

An active or passive microelectronic device 145 may be coupled to uppersurface 132 of package substrate 19. Microelectronic device 145 mayinclude an active integrated circuit die and/or a passive component. Apassive component may be a capacitor, an inductor, or a resistor, or anycombination thereof.

Microelectronic device 145 may be coupled to package substrate 19 withball or bump interconnects and/or wire bond wires, as previouslydescribed. Moreover, microelectronic device 145 may be coupled to uppersurface 132 with an adhesive or an underfill layer (not shown).

Microelectronic device 145 may be disposed in a dielectric protectivematerial 143, such as with an encapsulant or a molding material, for atleast covering an upper surface and sidewalls of microelectronic device145. Wire bond wires 131 may be disposed around sidewalls ofmicroelectronic device 145.

Conductive surface 130 may be located upon or coupled to a top or uppersurface 146 of dielectric protective material 143. However, in anotherimplementation a top surface of dielectric protective material 143 maybe at a higher level than tips 148 of wire bond wires 131, as describedbelow in additional detail. Conductive surface 130 may be positionedover wire bond wires 131 associated with Faraday cage 153. Upper ends ortips 148 of such wire bond wires 131 may be mechanically coupled toconductive surface 130. This coupling may be with a heated press bondingor other form of mechanical coupling.

Faraday cage 153 may be a combination of a portion of ground plane 140interconnected to wire bond wires 131, such as with vias 142, supportinga conductive surface 130. In another implementation, there may be a gap144 between conductive surface 130 and tips 148 of some of wire bondwires 131. Along those lines, a bottom of conductive surface 130, suchas of a conductive plate for example, may be attached to or rest upon atop surface of dielectric protective material 143, and height ofdielectric protective material 143 may be greater than height of wirebond wires 131.

Thus, a conductive surface 130 may be positioned over a portion of wirebond wires 131 with upper ends or tips 148 thereof spaced apart fromconductive surface 130. However, a configuration with a gap 144 mayprovide a less effective Faraday cage 153, and so for purposes ofclarity by way of example and not limitation, it shall be assume thatthere is no gap.

Wire bond wires 131 coupled to ground plane 140 projecting or extendingupwardly away from upper surface 132 of package substrate 19 may bearrayed. Along those lines, even though single rows and columns of aBond Via Array™ or BVA™ arrangement 136 of wire bond wires 131 may bepresent in an implementation, multiple rows and/or multiple columns ofwire bond wires 131 of a BVA™ arrangement 136, may be present along oneor more sides of a shielding region 133.

To recapitulate, some of wire bond wires 131, such as in BVA arrangement136 defining a shielding region 133, may be positioned to provide such ashielding region 133 for microelectronic device 145 from or with respectto EMI. Another portion of wire bond wires 131 located outside ofshielding region 133 may not be used for EMI shielding. Moreover, one ormore other active or passive microelectronic devices 11 and/or 12 may becoupled to substrate 19 and be located outside of shielding region 133and not part of, or position for such shielding region.

FIG. 5 is a block diagram of a cross-sectional side view depicting anexemplary SiP 100 with a conductive cover 150 and with signal wire bondwires 131 s in an EMI shielding region under conductive cover 150. SiP100 of FIG. 5 is the same as SiP 100 of FIG. 4, but with the followingdifferences.

In this example, a portion of wire bond wires 131 have a height that isgreater than a height of another portion of wire bond wires 131. Bothsets of wire bond wires 131 may be positioned proximate to and aroundmicroelectronic device 145. However, the portion of wire bond wires 131that are taller may be for providing a shielding region 133 formicroelectronic device 145 with respect to EMI. Whereas, the otherportion of wire bond wires 131 that are shorter (“wire bond wires 131s”) may be signal wires coupling microelectronic device 145 toconductors of package substrate 19. Such shorter wire bond wires 131 smay be within a Faraday cage 153. Heights of taller wire bond wires 131may be limited to low-profile package applications.

Conductive cover 150 may be coupled to upper surface 132 of packagesubstrate 19. Conductive cover 150 may cover components of SiP 100coupled to upper surface 132 including microelectronic device 145,microelectronic devices 11, 12 and wire bond wires 131. Wire bond wires131 not part of BVA arrangement 136 may interconnect conductive cover150 and ground plane 140. This coupling may be used to reduce internalnoise. However, Faraday cage 153 may be located under cover 150 forinternal EMI shielding. Optionally, conductive surface 130 may beomitted in favor of using conductive cover as an upper conductivesurface of Faraday cage 153, with or without a gap 144 between tips 148and an underside of conductive cover 150.

Some wire bond wires 131 within BVA arrangement 136 may be signal wires,namely wire bond wires 131 s. Wire bond wires 131 s may not be coupledto ground plane 140, but may be coupled to traces (not shown) of packagesubstrate 19. Tips of wire bond wires 131 s may be bonded or soldered tomicroelectronic device 145 prior to use of dielectric protectivematerial 143. In another implementation, dielectric protective material143 may be omitted with respect to microelectronic device 145.

Wire bond wires 131 s may be bonded to upper surfaces of one or more ofpassive microelectronic devices 12 or active microelectronic devices 11.These wire bond wires 131 s may be for interconnection within SiP 100.

FIG. 6 is a block diagram of a cross-sectional side view depicting anexemplary SiP 100 with EMI shielding using an upper substrate 169. SiP100 of FIG. 6 is the same as SiP 100 of FIG. 5, but without a conductivecover 150 and with the following differences.

Upper substrate 169 in addition to vias 162 may include a ground plane160. Tips or upper ends 148 of wire bond wires 131 may be interconnectedto vias 162 along a bottom surface of upper substrate 169 withinterconnects 161, such as with micro balls or microbumps for example,for coupling to ground plane 160. Interconnects 161 may be disposed onan upper surface 168 of dielectric protective material 143. Ground plane160 may provide an upper conductive surface 130 of Faraday cage 153.

Another microelectronic device 165, whether active or passive, may becoupled to a top surface of upper substrate 169. Microelectronic device165 may be coupled with wire bond wires 15 to vias or traces ofsubstrate 169. However, micro balls or microbumps may be used in anotherimplementation. Microelectronic device 165 may be coupled outside ofFaraday cage 153.

FIG. 7 is a block diagram of a top-down view depicting an exemplaryportion of an SiP 100 prior to addition of an upper conductive surface130 of a Faraday cage 153. Bond pads 170 may be positioned proximate toand around microelectronic device 145 for coupling wire bond wires 131respectively thereto for providing shielding region 133 of Faraday cage153. Shielding region 133 may be defined within a BVA arrangement 136.

Bond pads 170 may be spaced apart from one another around sides ofdielectric protective material 143. Microelectronic device 145 indielectric protective material 143 may be located in a central portionof shielding region 133. A pad-to-pad pitch 171 of bond pads 170 may beequal to or less than approximately 250 microns. Pitch 171 of bond pads170 may be selected for frequencies associated with interference, suchas EMI and/or RFI, to shield microelectronic device 145 from EMI and/orRFI. Moreover, microelectronic device 145 may be an interferenceradiator, and thus such shielding may be to protect other components ofSiP 100 from interference generated by microelectronic device 145.

Even though single rows and columns of bond pads 170 are illustrativelydepicted, in another implementation there may be more than one or tworows and/or columns. Moreover, rows and/or columns of bond pads 170 maybe interleaved with respect to one another to provide denser shielding.Effectively, wire bond wires 131 may be used to provide a low passfilter Faraday cage for reducing EMI with respect to operation ofmicroelectronic device 145. Along those lines, placement of bond pads170, and thus wire bond wires 131 may, though need not be, uniform. Wirebond wires 131 may be placed and/or adjusted for density tailored toshield a particular range of frequencies to or from microelectronicdevice 145.

FIG. 8 is a block diagram of a top-down view depicting an exemplaryportion of another SiP 100 prior to addition of an upper conductivesurface 130 of a Faraday cage 153. In this example, two rows and twocolumns of a BVA arrangement 136 of wire bond wires 131 are used todefine a shielding region 133. In this example, spacing between rows andcolumns is interleaved to provide a denser pattern of wire bond wires131.

In this example, some of wire bond wires 131 of BVA arrangement 136 arefor carrying signals, namely wire bond wires 131 s. Along those lines,interconnects 180 may be formed for extending from microelectronicdevice 145 outside of dielectric protective material 143 forinterconnection with signal wire bond wires 131 s.

FIG. 9A is a block diagram of a cross-sectional side view depicting anexemplary portion of a package-on-package (“PoP”) device 190 with EMIshielding. PoP device 190 may include an upper SiP 100U stacked on topof a lower SiP 100L. PoP device 190 may include one or more othermicroelectronic devices outside of a shielding region as well as otherdetails, such as previously described with reference to FIGS. 3A through8 for example. Accordingly, previously described details for SiPs 100are not described hereinbelow for purposes of clarity and notlimitation.

A lower package substrate 19L of a lower SiP 100L may include a lowerground plane 140L having lower wire bond wires 131L extending upwardlyfrom an upper surface of lower package substrate 19L. Such lower wirebond wires 131L and ground plane 140L may be interconnected to oneanother, such as with vias and ball bonds as previously described, forforming a lower portion of a Faraday cage 153. Tips 148 of lower wirebond wires 131L may be bonded or coupled with interconnects 191 to padsand vias therefor along an underneath side of upper package substrate19U.

Optionally, upper package substrate 19U may include an upper groundplane 140U for forming a Faraday cage 153 as a stack of two Faradaycages, namely an upper Faraday cage 192U and a lower Faraday cage 192L.Each of Faraday cages 192U and 192L may include respective packagedmicroelectronic devices 145U and 145L respectively coupled to uppersurfaces of package substrates 19U and 19L.

Upper ground plane 140U of upper substrate 19U may be located over alower microelectronic device 145L, so tips or upper ends 148 of lowerwire bond wires 131L may be interconnected to pads or contacts withinterconnects 191 along an underside surface of upper package substrate19U for electrical coupling to upper ground plane 140U. Upper wire bondwires 131U and optional ground plane 140U may be interconnected to oneanother, such as with vias and ball bonds as previously described, forforming an upper portion of a Faraday cage 153. Tips 148 of upper wirebond wires 131U may be bonded or coupled to conductive surface 130 forcompleting such upper Faraday cage 192U.

In another implementation, vias of upper substrate package 19U mayinterconnect lower wire bond wires 131L with upper wire bond wires 131Uwithout being connected to an upper ground plane 140U to form a“two-story” or bi-level Faraday cage 153 for two microelectronic devices145U, 145L. Even though only two levels are illustratively depicted,more than two levels may be used in other implementations.

FIG. 9B is a block diagram of a cross-sectional side view depicting anexemplary portion of another PoP device 190 with EMI shielding. PoPdevice 190 may include one or more other microelectronic devices outsideof a shielding region as well as other details, such as previouslydescribed with reference to FIGS. 3A through 9A for example.Accordingly, previously described details for SiPs 100 are not describedhereinbelow for purposes of clarity and not limitation.

PoP device 190 of FIG. 9B may be the same as PoP device 190 of FIG. 9A,except with the following differences. PoP device 190 of FIG. 9B mayinclude signal wire bond wires 131 s. Signal wire bond wires 131 s maybe located within Faraday cage 153, including within Faraday cage 192U.

Signal wire bond wires 131 s in this configuration may extend upwardlyfrom an upper surface of a lower microelectronic device 145L. Tips orupper ends 148 of wire bond wires 131 s extending from an upper surfaceof lower microelectronic device 145L may be interconnected to anunderneath side of upper package substrate 19U, such as withinterconnects 191. Vias and/or traces (not shown) may electricallycouple upper and low microelectronic devices 145 with signal wire bondwires 131 s. Moreover, lower substrate package 19L may include viasand/or traces (not shown) for interconnection with lower microelectronicdevice 145.

FIG. 10 is a block diagram of a cross-sectional side view depicting anexemplary portion of another SiP 100 with EMI shielding. SiP 100 mayinclude one or more other microelectronic devices outside of a shieldingregion as well as other details, such as previously described withreference to FIGS. 3A through 9B for example. Accordingly, previouslydescribed details for SiPs 100 are not described hereinbelow forpurposes of clarity and not limitation.

In this example, wire bond wires 131 and a microelectronic device 145,such as an IC die, are protected by a dielectric protective material143. Microelectronic device 145 may be interconnected with microbumpinterconnects 17 to an upper surface of package substrate 19 prior todepositing or injecting dielectric protective material 143. Likewise,wire bond wires 131 may be ball bonded to an upper surface of packagesubstrate 19 prior to depositing or injecting dielectric protectivematerial 143.

Optionally, signal wire bond wires 131 s may be ball bonded to an uppersurface 201 of microelectronic device 145 prior to depositing orinjecting dielectric protective material 143. Signal wire bond wires 131s thus may be within a shielding region 133 of a Faraday cage 153.

Tips or upper ends 148 of wire bond wires 131, as well as optionalsignal wire bond wires 131 s, may extend above an upper surface 202 ofdielectric protective material 143. Solder balls or other interconnecteutectic masses 204 may be deposited onto tips 148 for subsequentinterconnection, such as describe elsewhere herein.

Vertical Integration without Interference Shielding

FIG. 11A is a block diagram of a cross-sectional side view depicting anexemplary portion of an SiP 100 without wire bond wire EMI shielding.FIG. 11B is a block diagram of a cross-sectional side view depicting anexemplary portion of aSiP 100 which may or may not include EMIshielding. With simultaneous reference to FIGS. 11A and 11B, SiPs 100respectively illustratively depicted in those figures are furtherdescribed. Each of SiPs 100 may include one or more othermicroelectronic devices as well as other details, such as previouslydescribed. Accordingly, previously described details for SiP 100 are notdescribed hereinbelow for purposes of clarity and not limitation.

Each of SiPs 100 includes a vertically integrated microelectronicpackage 200. Each of microelectronic packages 200 includes a substrate19 having an upper surface 132 and a lower surface 149 opposite theupper surface. Package substrate 19 may have located between surfaces132 and 149 a ground plane 140 and vias 142 interconnected to suchground plane for electrical conductivity, however, this is not arequirement.

A microelectronic device 145 may be coupled to upper surface 132 ofsubstrate 19, where microelectronic device is an active or passivemicroelectronic device. Along those lines, in an SiP 100 there may beone or more of either or both passive or active microelectronic devicescoupled to upper surface 132. The active or passive devices may beimplemented on a semiconductor chip or may be implemented as discreetcomponents, such as standalone capacitors, resistors, inductors,antenna, sensors, etc. If implemented in or on a semiconductor material,the component may be connected in a face up or face down configurationand may also have one or more through semiconductor vias (TSVs) couplingopposing sides of the component. According to this implementation uppersurfaces of such active or passive microelectronic devices, which may inthe past have gone unused for vertical integration, now include bondingwire bond wires attached to such upper surfaces of such microelectronicdevices for connection to other passive or active components.

More particularly, wire bond wires 131 may be coupled to and extend awayfrom the upper surface 132 of substrate 19, and wire bond wires 231 maybe coupled to and extend away from an upper surface 201 ofmicroelectronic device 145. Wire bond wires 131 and 231 may bemechanically coupled to upper surfaces 132 and 201, respectively, withball bonds 141 for electrical conductivity. However, in otherimplementations, other types of bonding may be used. Wire bond wires 231are shorter in length than wire bond wires 131.

With reference to FIG. 11A, wire bond wires 131 may have an overallfinished length 261, and wire bond wires 231 may have an overallfinished length 262. However, finished heights of wire bond wires 131and 231 may be approximately the same for having upper ends 148 extendabove an upper surface 202 of molding layer 143.

Upper ends 148 may be coterminous for being generally coplanar. Solderballs or other interconnect eutectic masses 204 may be deposited onupper surface 202 respectively over upper ends 148 for forminginterconnects with pads (not shown) on a front face underside of anactive or passive microelectronic device 11 or 12.

According to one implementation, microelectronic device 145 may becoupled to upper surface 132 of package substrate 19. Microelectronicdevice 145 may include conductive traces and may include only passivecomponents. If implemented as a passive component, microelectronicdevice 145 may represent a capacitor, an inductor, or a resistor, or anycombination thereof. If implemented as an active component,microelectronic device 145 may represent, e.g., a die with transistors,but additionally or alternatively may include other active or passivedevices on or in the active component.

Microelectronic device 145 may be coupled to package substrate 19 withball or bump interconnects and/or wire bond wires, as previouslydescribed. Moreover, microelectronic device 145 may be coupled to uppersurface 132 with an adhesive or an underfill layer (not shown).

In the implementation shown, microelectronic device 145, as well asmicroelectronic device 11 or 12, have orientations facing downwardly,namely face-down orientations, toward upper surface 132 of substrate 19.However, in another implementation, microelectronic device 11 or 12 mayadditionally or alternatively have circuitry on a front side face facingupwardly away from an upper surface 132 of substrate 19.

A microelectronic device 11 or 12 may be coupled above uppermost surface202 of molding layer 143. In an implementation, a microelectronic device11 or 12 may be coupled to upper ends 148 of wire bond wires 131 and 231with eutectic masses 204 or other mechanical interconnects.Microelectronic device 11 or 12 may be located above microelectronicdevice 145 and may completely overlap microelectronic device 145, atleast partially overlap such microelectronic device 145, or may notoverlap microelectronic device 145 at all.

Molding layer 143 may have an uppermost surface 202 and a lowermostsurface 252 opposite the uppermost surface. Molding layer 143 may bedisposed for surrounding portions of lengths 261 and 262 for both wirebond wires 131 and 231. Upper ends 148 may not be covered with moldinglayer 143, such as by use of a mold assist film for an injection moldingfor example. In another implementation, molding layer 143 maytemporarily completely cover lengths 261 and 262 followed by an etchback to reveal upper ends 148.

In an implementation of a vertically integrated microelectronic package200, microelectronic device 145 may be disposed in molding layer 143.Along those lines, in an implementation, microelectronic device 145 maybe completely located between uppermost surface 202 and lowermostsurface 252 of molding layer 143. Wire bond wires 131 may be disposedaround sidewalls 203 of microelectronic device 145 though not forinterference shielding in this example implementation.

Wire bond wires 131 may be coupled to ground plane 140 for projecting orextending upwardly away from upper surface 132 of package substrate 19and may be arrayed. Along those lines, even though single rows andcolumns of a BVA™ arrangement of wire bond wires 131 and/or 231 may bepresent in an implementation, multiple rows and/or multiple columns ofsuch wire bond wires may be in a BVA™ arrangement.

In an implementation of vertically integrated microelectronic package200, microelectronic device 12, implemented as a passive microelectronicdevice, may be used. However, in another implementation of verticallyintegrated microelectronic package 200, microelectronic device 11 may beimplemented as an active microelectronic device.

With reference to FIG. 11B, inner wire bond wires 131 i may have anoverall finished length 263, and wire bond wires 231 may have an overallfinished length 264. Outer wire bond wires 1310 may have an overallfinished height 261, as previously described with reference to FIG. 11A.Finished heights of wire bond wires 131 i and 231 may be approximatelythe same after forming for having upper ends 148 generally even with oneanother.

Upper ends 148 of wire bond wires 131 i and 231 may be coterminous forbeing generally coplanar. Solder balls or other interconnect eutecticmasses 274 may couple a lower surface of an active or passivemicroelectronic device 271 respectively to upper ends 148 of wire bondwires 131 i and 231 for forming interconnects with pads (not shown) on afront face underside of an active or passive microelectronic device 271.A molding material may be injected to form molding material layer 143with microelectronic device 271 in place, and thus a lower surface ofmicroelectronic device 271 may be in contact with molding material ofmolding layer 143. For molding, a mold assist film may be used to allowtips 148 of outer wire bond wires 1310 to extend above upper surface 202of molding layer 143, as well as pads or other interconnects (not shown)of microelectronic device 271. In another implementation, molding layer143 may temporarily completely cover lengths 261 followed by an etchback to reveal upper ends 148 thereof.

Microelectronic device 271 may be coupled to and located abovemicroelectronic device 145 and may at least partially overlapmicroelectronic device 145. Along those lines, microelectronic device271 may laterally extend outside a perimeter of microelectronic device271 for interconnection of inner wire bond wires 131 i between uppersurface 132 of substrate 19 and a lower surface of microelectronicdevice 271 facing such upper surface 132. Wire bond wires 131 i, as wellas wire bond wires 131 o, may be disposed around sidewalls 203 ofmicroelectronic device 145 though not for interference shielding in thisexample implementation.

Again, a passive microelectronic device 145 may be coupled to uppersurface 132 of package substrate 19. Microelectronic device 145 mayinclude conductive traces and may include only passive components. Apassive component may be a capacitor, an inductor, or a resistor, or anycombination thereof. Microelectronic device 145 may be coupled topackage substrate 19 with ball or bump interconnects and/or wire bondwires, as previously described. Moreover, microelectronic device 145 maybe coupled to upper surface 132 with an adhesive or an underfill layer(not shown). If the microelectronic device is a discreet passivecomponent, the wire 231 may be formed on a solder portion, such as asolder pad or on a copper, nickel, gold, or alloy pad.

Molding layer 143 may have an uppermost surface 202 and a lowermostsurface 252 opposite the uppermost surface. Molding layer 143 may bedisposed for surrounding portions of lengths 261 of wire bond wires 1310and for surrounding lengths 263 and 264 for both wire bond wires 131 iand 231.

In an implementation of vertically integrated microelectronic package200, microelectronic device 145 may be disposed in molding layer 143 andcompletely located between uppermost surface 202 and lowermost surface252 of molding layer 143. Microelectronic device 271 may be disposed inmolding layer 143 and at least partially located between uppermostsurface 202 and lowermost surface 252 of molding layer 143.Microelectronic device 11 or 12 may be coupled above uppermost surface202 of molding layer 143.

For a passive microelectronic device 271, microelectronic device 271 mayinclude conductive traces and may include only passive components.Microelectronic device 271 may include an RDL. A passive component maybe a capacitor, an inductor, or a resistor, or any combination thereof.In this implementation, microelectronic devices 145 and 271, as well asmicroelectronic devices 11 or 12, have orientations facing downwardly,namely face-down orientations, toward upper surface 132 of substrate 19.However, in another implementation, microelectronic device 11 or 12and/or microelectronic device 271 may have a front side face facingupwardly away from an upper surface 132 of substrate 19.

In an implementation of vertically integrated microelectronic package200, microelectronic device 12, which is a passive microelectronicdevice, may be used. However, in another implementation of verticallyintegrated microelectronic package 200, microelectronic device 11, whichis an active microelectronic device, may be used. A microelectronicdevice 11 or 12 may be coupled above uppermost surface 202 of moldinglayer 143 for interconnection with microelectronic device 271. In animplementation, a microelectronic device 11 or 12 may be coupled to anupper surface of microelectronic device 271 with eutectic masses 204 orother mechanical interconnects for electrical conductivity.

Microelectronic device 11 or 12 may be located above microelectronicdevice 271 and at least partially overlap such microelectronic device271. Along those lines, a microelectronic device 11 or 12 may be coupledabove uppermost surface 202 of molding layer 143 for interconnectionwith upper ends 148 of outer wire bond wires 131 o, as well asinterconnection with an upper surface of microelectronic device 271.

Wire bond wires 131 i and 1310 may be coupled to ground plane 140 forprojecting or extending upwardly away from upper surface 132 of packagesubstrate 19 and may be arrayed. Along those lines, even though singlerows and columns of a BVA™ arrangement of wire bond wires 131 i, 131 o,and/or 231 may be present in an implementation, multiple rows and/ormultiple columns of such wire bond wires may be in a BVA™ arrangement.

FIG. 12A is a block diagram of a cross-sectional side view depicting anexemplary portion of another SiP 100 without wire bond wire EMIshielding. SiP 100 of FIG. 12A may be the same as in FIG. 11A, exceptfor the following details. In this implementation of a verticallyintegrated microelectronic package 200, microelectronic device 12 iscantilevered for laterally extending over and above a wire bond wire131. Along those lines, upper ends 148 of wire bond wires 131 may beinterconnected with eutectic masses 204 to a lower surface of amicroelectronic device 11 or 12.

FIG. 12B is a block diagram of a cross-sectional side view depicting anexemplary portion of another SiP 100 without wire bond wire EMIshielding. SiP 100 of FIG. 12B may be the same as in FIG. 11B, exceptfor the following details. In this implementation of a verticallyintegrated microelectronic package 200, microelectronic device 12 is notcantilevered for laterally extending over and above a wire bond wire 131o. Along those lines, a microelectronic device 11 or 12 andmicroelectronic device 271 may have approximately equal surface areasfor lower and upper surfaces respectively thereof.

FIG. 12C is a block diagram of a cross-sectional side view depicting anexemplary portion of another SiP 100 without wire bond wire EMIshielding. SiP 100 of FIG. 12C may be the same as in FIG. 12A, exceptfor the following details. In this implementation of a verticallyintegrated microelectronic package 200, microelectronic device 12 iscantilevered for laterally extending over and above wire bond wires 131on both a right and a left side of microelectronic device 145. Alongthose lines, upper ends 148 of wire bond wires 131 may be interconnectedwith eutectic masses 204 to a lower surface of a microelectronic device11 or 12. Accordingly, it should be appreciated that wire bond wires 131disposed around a microelectronic device and interconnected to amicroelectronic device 11 or 12 may be used for fan-out.

FIG. 12D is a block diagram of a cross-sectional side view depicting anexemplary portion of another SiP 100 without wire bond wire EMIshielding. SiP 100 of FIG. 12D may be the same as in FIG. 12B, exceptfor the following details. In this implementation of a verticallyintegrated microelectronic package 200, microelectronic device 12 is notcantilevered for laterally extending over and above a wire bond wire 131o. Along those lines, a microelectronic device 11 or 12 andmicroelectronic device 271 may have approximately equal surface areasfor lower and upper surfaces respectively thereof. Along those lines,upper ends 148 of wire bond wires 131 i may be interconnected witheutectic masses 274 to a lower surface of a microelectronic device 271.Accordingly, it should be appreciated that wire bond wires 131 idisposed around a microelectronic device 145 and interconnected to amicroelectronic device 271 may be used for fan-out.

FIG. 13A is a block diagram of a cross-sectional side view depicting anexemplary SiP 100 without EMI shielding and with a vertically integratedmicroelectronic package 200. In this implementation, a verticallyintegrated microelectronic package 200 may be a stand-alone packagecoupled to substrate 19 as in FIG. 12D of an SiP 100. As components ofSiP 100 have been previously described, such as with reference to FIG. 4for example, such description is not repeated.

In this implementation, eutectic masses 274 are formed on an uppersurface 202 of molding layer 143. Eutectic masses 274 interconnect upperends 148 of wire bond wires 131 i and 231, which may be encapsulated inmolding layer 143 except for lower and upper ends thereof, to a lowersurface of microelectronic device 271. In this example, a lower surfaceof microelectronic device 271 is not in contact with an upper surface202 of molding layer 143.

Moreover, in this example implementation, signal wire bond wires 131 smay be encapsulated in molding material of molding layer 143, except forlower surfaces of such signal wire bond wires 131 s. Signal wire bondwires 131 s may be shorter than inner wire bond wires 131 i and may beas previously described for interconnection with a microelectronicdevice 145. Along those lines, microelectronic device 271 may be coupledto upper ends 148 of a taller portion of wire bond wires 131 coupled toupper surface 132, such as wire bond wires 131 i. Microelectronic device271 may further be coupled to upper ends 148 of wire bond wires 231.Another portion of wire bond wires 131 coupled to upper surface 132,such as signal wire bond wires 131 s, may have upper ends 148 thereofcoupled to an upper surface of microelectronic device 145, such aspreviously described.

Optionally, wire bond wires 331 may be coupled to one or more uppersurfaces of active microelectronic devices 11 and/or passivemicroelectronic devices 12 directly coupled to an upper surface 132 ofsubstrate 19.

Other details regarding SiP 100 of FIG. 13A have been previouslydescribed, and thus are not repeated for purposes of clarity and notlimitation.

FIG. 13B is a block diagram of a cross-sectional side view depicting anexemplary SiP 100 without EMI shielding and with a vertically integratedmicroelectronic package 200. In this implementation, a verticallyintegrated microelectronic package 200 may be a stand-alone packagecoupled to substrate 19 as in FIG. 13A of an SiP 100. As components ofSiP 100 have been previously described, such as with reference to FIG. 4for example, such description is not repeated.

SiP 100 of FIG. 13B is similar to SiP 100 of FIG. 13A, except for thefollowing differences. In SiP 100 of FIG. 13B, vertically integratedmicroelectronic package 200 omits microelectronic device 271. Thus, amicroelectronic device 11 and/or 12 may be directly coupled to an uppersurface 202 of molding layer 143 with eutectic masses 204, such aspreviously described.

FIG. 13C is a block diagram of a cross-sectional side view depicting anexemplary SiP 100 without EMI shielding and with a vertically integratedmicroelectronic package 200. In this implementation, a verticallyintegrated microelectronic package 200 may be a stand-alone packagecoupled to substrate 19 as in FIG. 13A of an SiP 100. As components ofSiP 100 have been previously described, such as with reference to FIG. 4for example, such description is not repeated.

SiP 100 of FIG. 13C is similar to SiP 100 of FIG. 13A, except for thefollowing differences. In SiP 100 of FIG. 13C, vertically integratedmicroelectronic package 200 has some wire bond wires 131 i encapsulatedin molding material of molding layer 143 as previously described and hassome wire bond wires 131 i not encapsulated in molding material ofmolding layer 143.

FIG. 13D is a block diagram of a cross-sectional side view depicting anexemplary SiP 100 without EMI shielding and with a vertically integratedmicroelectronic package 200. In this implementation, a verticallyintegrated microelectronic package 200 may be a stand-alone packagecoupled to substrate 19 as in FIG. 13B of an SiP 100. As components ofSiP 100 have been previously described, such as with reference to FIG. 4for example, such description is not repeated.

SiP 100 of FIG. 13D is similar to SiP 100 of FIG. 13B, except for thefollowing differences. In SiP 100 of FIG. 13D, vertically integratedmicroelectronic package 200 does not have wire bond wires 131encapsulated in molding material of molding layer 143.

These are some of a variety of implementations of a verticallyintegrated microelectronic package 200 for an SiP 100. However, these orother implementations may be provided in accordance with the descriptionherein.

Along those lines, while the foregoing describes exemplary embodiment(s)in accordance with one or more aspects of the invention, other andfurther embodiment(s) in accordance with the one or more aspects of theinvention may be devised without departing from the scope thereof, whichis determined by the claim(s) that follow and equivalents thereof.Claim(s) listing steps do not imply any order of the steps. Trademarksare the property of their respective owners.

What is claimed is:
 1. An apparatus for a microelectronic package havinginterference protection, comprising: a substrate having an upper surfaceand a lower surface opposite the upper surface and having bond pads onthe upper surface; a microelectronic device coupled to the upper surfaceof the substrate; wire bond wires having lower ends coupled to the bondpads, the wire bond wires extending away from the upper surface of thesubstrate and placed for one or more frequencies associated with theinterference; the wire bond wires positioned on at least one side of themicroelectronic device to provide a shielding region with respect to theinterference; a conductive surface positioned above the wire bond wiresfor covering the shielding region; and the wire bond wires having upperends coupled to the conductive surface.
 2. The apparatus according toclaim 1, wherein the wire bond wires are place to shield themicroelectronic device from the interference.
 3. The apparatus accordingto claim 2, wherein the microelectronic device is an active device. 4.The apparatus according to claim 2, wherein the microelectronic deviceis a passive device.
 5. The apparatus according to claim 1, wherein thewire bond wires are placed to shield the interference generated by themicroelectronic device.
 6. The apparatus according to claim 5, whereinthe microelectronic device is an active device.
 7. The apparatusaccording to claim 5, wherein the microelectronic device is a passivedevice.
 8. The apparatus according to claim 1, wherein the substrate isa package substrate of a system-in-package for the microelectronicpackage having active and passive microelectronic devices coupled to theupper surface.
 10. The apparatus according to claim 8, wherein the wirebond wires are located on at least one side of a perimeter of thesystem-in-package.
 11. The apparatus according to claim 1, wherein theconductive surface does not extend outside of a perimeter defined by theupper ends of the wire bond wires.
 12. The apparatus according to claim1, wherein the conductive surface extends outside of a perimeter definedby the upper ends of the wire bond wires.
 13. The apparatus according toclaim 1, wherein the conductive surface defines holes for at least someof the wire bond wires to extend through the holes.
 14. The apparatusaccording to claim 1, wherein at least a portion of the wire bond wiresare uniformly spaced apart from one another.
 15. The apparatus accordingto claim 1, wherein at least a portion of the wire bond wires are notuniformly spaced apart from one another.
 16. The apparatus according toclaim 1, wherein the wire bond wires are of a bond via array havinginterleaved spacing between rows and columns to increase density of thewire bond wires for filtering EMI, including RFI, for the interference.17. The apparatus according to claim 1, wherein the bond via arraysurrounds the shielding region.
 18. The apparatus according to claim 1,wherein the wire bond wires are electrically coupled to an electricalground.
 19. The apparatus according to claim 1, wherein some of the wirebond wires are coupled to a supply voltage.
 20. The apparatus accordingto claim 1, wherein some of the wire bond wires are coupled to carrysignals with the microelectronic package.
 21. The apparatus according toclaim 1, wherein the wire bond wires are coupled to ground planes forconducting the interference to the ground planes.
 22. The apparatusaccording to claim 1, wherein the microelectronic device is coupled tothe upper surface with ball or bump interconnects.
 23. The apparatusaccording to claim 1, wherein the microelectronic device is coupled tothe upper surface with other wire bond wires.
 24. The apparatusaccording to claim 1, wherein the microelectronic device is disposed ina dielectric protective material to cover at least an upper surface andsidewalls of the microelectronic device.
 25. The apparatus according toclaim 1, wherein the wire bond wires are disposed around the sidewallsof the microelectronic device.
 26. The apparatus according to claim 1,wherein the wire bond wires are first wire bond wires, the apparatusfurther comprising second wire bond wires coupled between the uppersurface of the substrate and an upper surface of the microelectronicdevice within the shielding region.
 27. The apparatus according to claim1, further comprising a conductive cover disposed over and spaced apartfrom the conductive surface, the conductive cover connected to a groundplane of the substrate.
 28. The apparatus according to claim 27, furthercomprising a dielectric layer disposed between the upper surface of thesubstrate and the conductive cover.
 29. The apparatus according to claim1, wherein the conductive surface is of a conductive cover disposed overthe substrate and interconnected to a ground plane of the substrate. 30.The apparatus according to claim 1, wherein pitch of the bond pads isselected for frequencies associated with EMI, including RFI, for theinterference.
 31. The apparatus according to claim 1, wherein pitch ofthe bond pads is selected to provide a low pass filter to reduce EMI,including RFI, for the interference with respect to operation of themicroelectronic device.